High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance.

نویسندگان

  • S-Y Kim
  • K Kim
  • Y H Hwang
  • J Park
  • J Jang
  • Y Nam
  • Y Kang
  • M Kim
  • H J Park
  • Z Lee
  • J Choi
  • Y Kim
  • S Jeong
  • B-S Bae
  • J-U Park
چکیده

As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm2 V-1 s-1). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.

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عنوان ژورنال:
  • Nanoscale

دوره 8 39  شماره 

صفحات  -

تاریخ انتشار 2016