High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance.
نویسندگان
چکیده
As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm2 V-1 s-1). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.
منابع مشابه
Direct printing of reduced graphene oxide on planar or highly curved surfaces with high resolutions using electrohydrodynamics.
Electrohydrodynamic inkjet printing of reduced graphene oxide (RGO) is de-monstrated to form complex geometric devices with high resolution (line width ≈ 5 mm). Both planar and highly curved surfaces (radius of curvature ≈ 60 mm) can be used as substrates. Demonstrations of counterfeit coin recognition using RGO patterns and all-printed RGO transistors suggest substantial promise for applicatio...
متن کاملA Review on Electrohydrodynamic-inkjet Printing Technology
Electrohydrodynamic (EHD)-inkjet printing is a novel high resolution inkjet printing technology with the advantages of being a maskless, non-contact, direct-write and additive process. Its printing resolution exceeds by about two orders of magnitude in comparison to the conventional inkjet printing systems. It is used in the field of micro/nano manufacturing for patterning of large class of mat...
متن کاملHigh-resolution electrohydrodynamic jet printing of small-molecule organic light-emitting diodes.
The development of alternative organic light-emitting diode (OLED) fabrication technologies for high-definition and low-cost displays is an important research topic as conventional fine metal mask-assisted vacuum evaporation has reached its limit to reduce pixel sizes and manufacturing costs. Here, we report an electrohydrodynamic jet (e-jet) printing method to fabricate small-molecule OLED pix...
متن کاملAll inkjet printed SnO2/ZrO2 transistors
Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission....
متن کاملA stretchable form of single-crystal silicon for high-performance electronics on rubber substrates.
We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When supported by an elastomeric substrate, this "wavy" silicon can be reversibly stretched and compressed to large levels of strain without damaging the silicon. The amplitudes and periods of the waves change to accommodate...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Nanoscale
دوره 8 39 شماره
صفحات -
تاریخ انتشار 2016